The DX centre
T.N. Morgan
Semiconductor Science and Technology
Oriented single-crystal faces of TiC (100)-(1×1) and TiC (111)-Ti (1×1) have been studied with angle-resolved photoelectron spectroscopy using synchrotron radiation for 8≤hν≤70 eV. From normal-emission spectra, criticalpoint energies have been determined for the occupied carbon 2s band (10-13 eV below EF) and for the occupied Ti 3d-C 2p band (L3′=-6 eV, L3′=-3 eV, X4′-Δ1=-4 eV, X5′=-0.5 eV, and Δ5=-0.8 eV). Recent band calculations are shown to be qualitatively correct, although most calculations place the bands too close to the Fermi energy EF. Critical points in the empty Ti 4s-derived band (L1′=8.7 eV and X1=11.5 eV above EF) have been identified through studies of final-state effects in normal emission. Three-dimensional density-of-states features were observed in normal-emission spectra, although such spectra should sample only the high-symmetry lines Γ-Δ-L and Γ-Λ-L; these could be due to the effects of bulk vacancies in the TiC0.93 crystal or to surface inhomogeneities incurred in the preparation process (ion etching and annealing). © 1980 The American Physical Society.
T.N. Morgan
Semiconductor Science and Technology
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009