Conference paper
Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Angle-resolved photoemission measurements for GaAs(110) have been extended to hv= 100 eV. These results show that dominant emission peaks are due to direct transitions. Weaker one-dimensional density of states features sometimes observed are due to surface umklapp/secondary cone and lifetime effects. Accurate band dispersions {A figure is presented} for all four valence bands GaAs along the [110] direction are given using simple normal emission and off-normal emission methods. Electron and hole lifetimes are directly determined. © 1979.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Michiel Sprik
Journal of Physics Condensed Matter
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
J. Tersoff
Applied Surface Science