Jun Yuan, C. Gruensfelder, et al.
ICSICT 2010
Paper
Analysis and modeling of threshold voltage mismatch for CMOS at 65 nm and beyond
Abstract
This letter investigates random dopant fluctuation transistor mismatch. The dominance of the halo implant is demonstrated experimentally and with simulation, and a compact model form is developed for improved representation of the phenomenon. © 2008 IEEE.
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