H. Baratte, A.J. Fleischman, et al.
JES
Paper
An isothermal etchback-regrowth method for high-efficiency Ga1-xAlxAsGaAs solar cells
Abstract
High-efficiency pGa1-xAlxAs, nGaAs solar cells are made by isothermally soaking n-GaAs substrates in an undersaturated Zn-doped GaAlAs melt. This one-step growth procedure produces a graded band gap pGa1-xAlxAs layer 0.2-0.4 μm thick. Efficiencies of 18.5% AM0 and 21.9% AM1 have been measured. © 1990.
Related
M.A. Tischler, D.C. Latulipe, et al.
Journal of Crystal Growth
M.R. Melloch, N. Otsuka, et al.
Applied Physics Letters
P.D. Kirchner, J. Woodall, et al.
IEEE T-ED