Conference paper
Development of stacking faults in strained silicon layers
S.W. Bedell, A. Reznicek, et al.
IEEE International SOI Conference 2005
Paper
An isothermal etchback-regrowth method for high-efficiency Ga1-xAlxAsGaAs solar cells
Abstract
High-efficiency pGa1-xAlxAs, nGaAs solar cells are made by isothermally soaking n-GaAs substrates in an undersaturated Zn-doped GaAlAs melt. This one-step growth procedure produces a graded band gap pGa1-xAlxAs layer 0.2-0.4 μm thick. Efficiencies of 18.5% AM0 and 21.9% AM1 have been measured. © 1990.
Related
H.J. Hovel, J. Woodall
Applied Physics Letters
J. Woodall, H. Rupprecht, et al.
IEEE T-ED
S.M. Vernon, A.E. Blakeslee, et al.
JES