Julien Autebert, Aditya Kashyap, et al.
Langmuir
Using an approximate solution of the Hubbard-model Hamiltonian, we are able to establish that the Cs-GaAs(110) system becomes a Mott insulator at submonolayer Cs coverages. We also provide a consistent interpretation of electron-energy-loss and scanning-tunneling-spectroscopies data. The correlation effects are important for this system with an estimated correlation energy of 0.4 eV. © 1993 The American Physical Society.
Julien Autebert, Aditya Kashyap, et al.
Langmuir
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
David B. Mitzi
Journal of Materials Chemistry