D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
Using an approximate solution of the Hubbard-model Hamiltonian, we are able to establish that the Cs-GaAs(110) system becomes a Mott insulator at submonolayer Cs coverages. We also provide a consistent interpretation of electron-energy-loss and scanning-tunneling-spectroscopies data. The correlation effects are important for this system with an estimated correlation energy of 0.4 eV. © 1993 The American Physical Society.
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
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SPIE Advances in Semiconductors and Superconductors 1990