Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
In electron tunnelling from channel to gate in a field effect transistor, and in alpha-particle emission from atomic nuclei, the tunnelling transition is from a quasi-level to a continuum of states, to which conventional tunnelling theory does not apply. Gamow, in the alpha-emission case, proposed to consider particle states with an imaginary component of energy, -1/2ℏλ, where λ, is the tunnelling decay rate. It is shown in this paper, in terms of an appropriate real wavefunction ψ(x), that λ is then given by u/λ, = ∫0∞ r2dx, where r(x) = ψ(x)/ψ(0) and where u = ℏk/m is the velocity of the tunnelling particle. The application of this formula is discussed. The connection with a quantum resonance of the electron system is shown.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Sung Ho Kim, Oun-Ho Park, et al.
Small
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures