A tunneling magnetoresistance sensor overlaid with a longitudinal bias stack in a read region

A tunneling magnetoresistance (TMR) sensor overlaid with a longitudinal bias (LB) stack in a read region is studied. The TMR sensor comprises Pt-Mn/Co-Fe/Ru/Co-Fe/Al-O/Co-Fe/Ni-Fe films, and the LB stack comprises Co-Fe/A FM films. The Pt-Mn TMR sensor with the Co-Fe/Pt-Mn LB stack is fabricated for measuring TMR properties and testing read performance.