Surface processes in plasma-assisted etching
J.W. Coburn
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
The nature of the neutral species rf sputtered from several oxide targets has been studied using a technique in which the sputtered particles are ionized in the glow discharge and are then detected with a quadrupole mass filter. The extent to which the species MO+ are observed relative to the species M+ during the rf sputtering of an oxide target MxOy is studied as a function of M-O bond energy, rf power and discharge gas pressure. The results suggest that in certain cases the intensity of sputtered neutral molecules may exceed that of sputtered neutral atoms. © 1974 IOP Publishing Ltd.
J.W. Coburn
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
T.J. Chuang, H.F. Winters, et al.
Applications of Surface Science
Eric Kay, Gunther Heim
Journal of Applied Physics
Harold F. Winters, E. Taglauer
Physical Review B