E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
A structural and mechanistic model for initial room temperature Fe epitaxy on Cu(100) is presented, based on scanning tunneling microscopy data. Changes in Fe atom attachment kinetics with coverage θ yield several growth regimes: Fe incorporation into the surface by atomic exchange with Cu (θ < 0.2), growth of first-layer Fe islands (0.2 < θ < 0.7), and simultaneous layer-1 and layer-2 growth (0.7 < θ < 2). These results reconcile qualitative disparities in previous interpretations of experimental results. © 1994.
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry