A 20dBm E-band power amplifier in SiGe BiCMOS technology
Roee Ben Yishay, Roi Carmon, et al.
EuMIC 2012
A compact frequency octupler designed for upper and lower E-band transceivers is implemented in IBM 0.13μm SiGe technology. Three frequency doubler stages are used with harmonic rejection conducted at the first two doublers for wide band spectral purity. With a 0 dBm input power, the frequency octupler reaches above 7.5 dBm output power between 56 GHz to 84 GHz with a peak output power of 13.5 dBm. All even harmonics: 2nd, 4th, 6th, 10th, are suppressed by more than 40 dBc across the frequency band. Moreover, the 6th and 10th harmonics are suppressed by over 40 dBc at temperatures between-40°C to 85°C. The circuit enables an extra input option of a frequency quadrupler and occupies 1.23×1.1 mm2 and consumes 152 mA from a 2.7 V supply.
Roee Ben Yishay, Roi Carmon, et al.
EuMIC 2012
Shlomo Shlafman, David Goren, et al.
COMCAS 2011
Oded Katz, Dan A. Ramon, et al.
IEEE Transactions on VLSI Systems
Nadav Mazor, Benny Sheinman, et al.
IEEE MWCL