Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
A series of digital simulations indicates that an accurate measurement of the surface-tension temperature coefficient is important to the understanding of melt flow in Czochralski growth of silicon. If that parameter lies near the upper end of its presently conjectured range, the flow is also sensitive to the value of the viscosity coefficient. © 1982.
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Hiroshi Ito, Reinhold Schwalm
JES
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
I. Morgenstern, K.A. Müller, et al.
Physica B: Physics of Condensed Matter