Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
The Luttinger parameters of cubic SiC are determined by using a modified Lawaetz approach, including the hole-phonon coupling for small spin-orbit interaction: γ1 = 2.817, γ2 = 0.508, γ3 = 0.860, κ = -0.41. Revised ground state calculations of the electron-hole liquid, including the nonparabolic valence band dispersion, for conflicting theories of the electron-phonon interaction, yield a good agreement between the ε{lunate}*0-approximation and experiment. The calculated ground state binding energy of the free exciton and of the point-charge acceptor are 26.7 and 179 meV respectively. These calculations yield a revised value of the band gap energy Eg = 2.416 eV. © 1981.
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
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SPIE Advanced Lithography 2007
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