A 20dBm E-band power amplifier in SiGe BiCMOS technology
Roee Ben Yishay, Roi Carmon, et al.
EuMIC 2012
An RF receiver front end for EBAND communication in the lower band 71-76GHz frequency range was designed and fabricated in IBM 0.12μm SiGe technology. The LNA composed of four amplification stages, exhibits more than 15dB gain and a NF of less than 6dB in the entire frequency band. A steep two chain stop band filter is used to reject image noise with better than 18dB image rejection. The LNA is followed by a single balanced active down converting mixer used to convert the received signal to the 8.5GHz IF frequency. The measured mixer conversion gain is around 4.5dB with a NF of 14dB. The above performance enables a super-heterodyne realization of a complete EBAND receiver with excellent image rejection. © 2011 IEEE.
Roee Ben Yishay, Roi Carmon, et al.
EuMIC 2012
Shlomo Shlafman, David Goren, et al.
COMCAS 2011
Oded Katz, Dan A. Ramon, et al.
IEEE Transactions on VLSI Systems
Nadav Mazor, Benny Sheinman, et al.
IEEE MWCL