A 20dBm E-band power amplifier in SiGe BiCMOS technology
Roee Ben Yishay, Roi Carmon, et al.
EuMIC 2012
A 240GHz ×4 frequency multiplier chain implemented in a fT/fMAX = 200/250GHz commercially available 0.12μm SiGe BiCMOS technology is presented. The chain achieves a peak output power of-0.5dBm (0.9mW) and consists of two balanced doublers driven by a differential two stages cascode power amplifier. It operates from 232GHz to 246GHz (3 dB power bandwidth) with 5dBm input power at 60GHz and consumes a total DC power of 520mW. The D-Band PA achieves output 1dB compression point and saturated power of 11.2 and 15.3dBm, respectively at 120GHz and 15.5dB small signal gain.
Roee Ben Yishay, Roi Carmon, et al.
EuMIC 2012
Shlomo Shlafman, David Goren, et al.
COMCAS 2011
Roee Ben Yishay, Danny Elad
IRMMW-THz 2016
Jakob Vovnoboy, Run Levinger, et al.
COMCAS 2015