Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Ab initio total-energy calculations were used to examine (2×2) reconstruction models for the (111) and (1̄1̄1̄) surfaces of GaAs. For the (111) surface the lowest-energy Ga-vacancy geometry is determined; several mechanisms for Ga-vacancy formation are examined and other reconstructions are discussed. For the (1̄1̄1̄) surface it is shown that the As-vacancy model is unlikely and other geometries are considered. © 1986 The American Physical Society.
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
Frank Stem
C R C Critical Reviews in Solid State Sciences
K.N. Tu
Materials Science and Engineering: A
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery