1/f noise in SiGe HBTs fabricated on CMOS-compatible thin-film SOI

We report, for the first time, the low frequency noise characteristics of both fully- and partially-depleted SiGe HBTs-on-SOI, both in forward and inverse modes of operation. These SiGe HBTs on thin-film SOI are then compared with bulk SiGe HBTs in order to evaluate how the fundamentally different device structure affects 1/f noise performance. In addition, the impact of substrate voltage, collector doping, and temperature on low-frequency noise is investigated.