M. Yang, J. Schaub, et al.
VLSI Technology 2003
We report an all-silicon optical receiver operating at 10 Gb/s. The lateral p-i-n photodiodes were fabricated using standard 130-nm complementary metal-oxide-semiconductor technology on silicon-on-insulator substrate. A sensitivity of -6.9 dBm (bit error ratio < 10-9) at 10 Gb/s was achieved.
M. Yang, J. Schaub, et al.
VLSI Technology 2003
G. Freeman, B. Jagannathan, et al.
International Journal of High Speed Electronics and Systems
J.A. Kash, F.E. Doany, et al.
OFC/NFOEC 2006
S.M. Csutak, J. Schaub, et al.
Journal of Lightwave Technology