P. Pepeljugoski, J. Schaub, et al.
OFC 2003
We report an all-silicon optical receiver operating at 10 Gb/s. The lateral p-i-n photodiodes were fabricated using standard 130-nm complementary metal-oxide-semiconductor technology on silicon-on-insulator substrate. A sensitivity of -6.9 dBm (bit error ratio < 10-9) at 10 Gb/s was achieved.
P. Pepeljugoski, J. Schaub, et al.
OFC 2003
J.A. Kash, F.E. Doany, et al.
LEOS 2005
S.M. Csutak, J. Schaub, et al.
IEEE Photonics Technology Letters
J. Schaub, S.M. Csutak, et al.
LEOS 2002