G. Freeman, B. Jagannathan, et al.
International Journal of High Speed Electronics and Systems
We report an all-silicon optical receiver operating at 10 Gb/s. The lateral p-i-n photodiodes were fabricated using standard 130-nm complementary metal-oxide-semiconductor technology on silicon-on-insulator substrate. A sensitivity of -6.9 dBm (bit error ratio < 10-9) at 10 Gb/s was achieved.
G. Freeman, B. Jagannathan, et al.
International Journal of High Speed Electronics and Systems
G. Dehlinger, S.J. Koester, et al.
IEEE Photonics Technology Letters
S.J. Koester, G. Dehlinger, et al.
GFP 2005
S.M. Csutak, J. Schaub, et al.
IEE Proceedings: Optoelectronics